The plasma dry etching technique is a technique for performing microfabrication of a film by using plasma. In a typical dry etching process, one or more gas atoms or molecules are mixed in the reaction chamber to form a plasma under external energy (such as radio frequency, microwave, etc.): on the one hand, active groups in the plasma The group chemically reacts with the surface material to be etched to form a volatile product; on the other hand, the ions in the plasma are guided and accelerated by the bias voltage to achieve directional corrosion and accelerated corrosion of the surface to be etched. The dry etching process is a combination of chemical reaction and physical bombardment. Compared with the traditional wet etching technology, the dry etching technology has been widely used in the field of microelectronics manufacturing due to its good anisotropy and process controllability. Nowadays, it is gradually extended to LEDs, packages and the like. IC field.
The plasma dry etching technique is a technique for performing microfabrication of a film by using plasma. In a typical dry etching process, one or more gas atoms or molecules are mixed in the reaction chamber to form a plasma under external energy (such as radio frequency, microwave, etc.): on the one hand, the activity in the plasma The group chemically reacts with the surface material to be etched to form a volatile product; on the other hand, the ions in the plasma are guided and accelerated by the bias voltage to achieve directional corrosion and accelerated corrosion of the surface to be etched. The dry etching process is a combination of chemical reaction and physical bombardment. Compared with the traditional wet etching technology, the dry etching technology has been widely used in the field of microelectronics manufacturing due to its good anisotropy and process controllability. Nowadays, it is gradually extended to LEDs, packages and the like. IC field.
